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UNIKC

P2003EEAA Datasheet Preview

P2003EEAA Datasheet

MOSFET

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P2003EEAA
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
20mΩ @VGS = -10V
ID
-25A
PDFN 3x3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
Gate-Source Voltage
VDS -30
VGS ±20
TC = 25 °C
-25
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Current
TC = 100 °C
TA = 25 °C
TA = 70 °C
ID
IDM
IAS
-16
-8
-6.3
-80
-29
Avalanche Energy
L = 0.1mH
EAS
42
TC = 25 °C
20.8
Power Dissipation
TC = 100 °C
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
PD
TJ, TSTG
8.3
2
1.2
-55 to 150
UNITS
V
A
mJ
W
°C
REV1.1
1 2014/6/9




UNIKC

P2003EEAA Datasheet Preview

P2003EEAA Datasheet

MOSFET

No Preview Available !

P2003EEAA
P-Channel Logic Level Enhancement Mode MOSFET
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM UNITS
Junction-to-Ambient3
Steady-State
Junction-to-Ambient
Steady-State
1Pulse width limited by maximum junction temperature.
RqJA
RqJC
62
6 °C / W
2Package limitation current is 30A.
3The value of RqJA is measured with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air
environment with TA = 25°C. The value in any given application depends on the user's specific board design.
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±20V
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V , TJ = 125 °C
VDS = -5V, VGS = -10V
VGS = -4.5V, ID = -7A
VGS = -10V, ID = -9A
VDS = -5V, ID = -9A
DYNAMIC
-30
-1 -1.5 -3
V
-100 nA
-1
mA
-10
-80 A
23 35
15 20
23 S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Rg
Qg(VGS=-10V)
Qg(VGS=-4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = -15V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 0.5V(BR)DSS, ID = -9A
VDS = -15V,
ID @ -9A, VGS = -10V, RGS = 6Ω
1300
212
200
2.8
29.4
15.6
3.8
7.8
20
12
55
36
pF
Ω
nC
nS
REV1.1
2 2014/6/9


Part Number P2003EEAA
Description MOSFET
Maker UNIKC
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