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UNIKC

P2003EEA Datasheet Preview

P2003EEA Datasheet

MOSFET

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P2003EEA
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
20mΩ @VGS = -10V
ID
-28A
PDFN 3x3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
Gate-Source Voltage
VDS -30
VGS ±25
TC = 25 °C
-28
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Current
TC = 100 °C
TA = 25 °C
TA = 70 °C
ID
IDM
IAS
-18
-10
-8
-70
-30
Avalanche Energy
L = 0.1mH
EAS
44
TC = 25 °C
25
Power Dissipation
TC = 100 °C
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
PD
TJ, TSTG
10
3.125
2
-55 to 150
UNITS
V
A
mJ
W
°C
REV1.1
1 2014/6/9




UNIKC

P2003EEA Datasheet Preview

P2003EEA Datasheet

MOSFET

No Preview Available !

P2003EEA
P-Channel Logic Level Enhancement Mode MOSFET
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
t 10s
Junction-to-Ambient
Steady-State
Junction-to-Ambient
Steady-State
1Pulse width limited by maximum junction temperature.
2Package limitation current is 22A.
SYMBOL
RqJA
RqJA
RqJC
TYPICAL
MAXIMUM
40
75
5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±25V
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V , TJ = 125 °C
VDS = -5V, VGS = -10V
VGS = -4.5V, ID = -7A
VGS = -10V, ID = -9A
VDS = -5V, ID = -9A
DYNAMIC
-30
-1 -1.6 -3
±100
-1
-10
-30
28 35
17.6 20
20
V
nA
mA
A
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Rg
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = -15V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
VDS = -15V, ID = -9A
VDS = -15V,
ID @ -9A, VGS = -10V, RGS = 6Ω
1590
296
218
3
31
15
6
7
8.7
8.5
18
7
pF
Ω
nC
nS
REV1.1
2 2014/6/9


Part Number P2003EEA
Description MOSFET
Maker UNIKC
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P2003EEA Datasheet PDF






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