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UNIKC

P2003BVT Datasheet Preview

P2003BVT Datasheet

N-Channel MOSFET

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P2003BVT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 20mΩ @VGS = 10V
ID
9A
SOP-8
100% Rg tested
100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
9
7
35
Avalanche Current
IAS 8
Avalanche Energy
L =0.1mH
EAS
3.2
Power Dissipation
TA= 25 °C
TA =70 °C
PD
2.5
1.6
Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
Tj, Tstg
TL
-55 to 150
275
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL MAXIMUM UNITS
50 °C / W
REV 1.0
1 2014/11/5




UNIKC

P2003BVT Datasheet Preview

P2003BVT Datasheet

N-Channel MOSFET

No Preview Available !

P2003BVT
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 55 °C
VDS = 5V, VGS = 10V
30
1
9
1.5 2.5
V
±100 nA
1
mA
10
A
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 6A
VGS = 10V, ID = 8A
VDS = 15V, ID = 8A
DYNAMIC
26 32
17 20
16 S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss
Crss
Rg
VGS = 0V, VDS = 15V, f = 1MHz
VGS = 15mV, VDS = 0V, f = 1MHz
524
132
62
2.14
pF
Ω
Total Gate Charge2
Qg(VGS=10V)
Qg(VGS=4.5V)
10
4.7
Gate-Source Charge2
Qgs(VGS=10V)
Qgs(VGS=4.5V)
VDS = 0.5V(BR)DSS, ID = 2A
1.3
nC
1.2
Gate-Drain Charge2
Qgd(VGS=10V)
Qgd(VGS=4.5V)
2.1
2.1
Turn-On Delay Time2
td(on)
11 18
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 15V,ID @ 1A,
VGEN = 10V, RG = 0.2Ω
17 26
nS
37 54
Fall Time2
tf
20 30
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
IS
2.3 A
Forward Voltage1
VSD IF = 1A, VGS = 0V
1.1 V
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
REV 1.0
2 2014/11/5


Part Number P2003BVT
Description N-Channel MOSFET
Maker UNIKC
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P2003BVT Datasheet PDF






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