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P2003BVG Datasheet Preview

P2003BVG Datasheet

N-Channel Enhancement Mode MOSFET

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P2003BVG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 20mΩ @VGS = 10V
ID
9A
SOP-8
100% Rg tested
100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±25
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
9
7
32
Avalanche Current
IAS 18.5
Avalanche Energy
L =0.1mH
EAS
17
Power Dissipation
TA= 25 °C
TA =70 °C
PD
2.5
1.6
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL MAXIMUM UNITS
50 °C / W
REV 1.1
1 2015/11/11




UNIKC

P2003BVG Datasheet Preview

P2003BVG Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

P2003BVG
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±25V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 55 °C
VDS = 5V, VGS = 10V
30
1
32
1.7 2.5
V
±100 nA
1
mA
10
A
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 6A
VGS = 10V, ID = 8A
VDS = 15V, ID = 8A
26 31
18.4 20
16
S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss
Crss
Rg
VGS = 0V, VDS = 15V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
524
132
62
2.2
pF
Ω
Total Gate Charge2
Gate-Source Charge2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
VDS = 15V , ID =8A
9.7
4.5 nC
1.5
Gate-Drain Charge2
Qgd
2.3
Turn-On Delay Time2
td(on)
11
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 15V,ID @ 1A,
VGEN = 10V, RG = 0.2Ω
17
nS
37
Fall Time2
tf
20
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
2.5 A
Forward Voltage1
VSD IF = 8A, VGS = 0V
1V
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
REV 1.1
2 2015/11/11


Part Number P2003BVG
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
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P2003BVG Datasheet PDF






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