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P2003BT Datasheet Preview

P2003BT Datasheet

N-Channel MOSFET

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P2003BT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 20mΩ @VGS = 10V
ID
39A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
39
25
120
Avalanche Current
IAS 21
Avalanche Energy
L = 0.1mH
EAS
22
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
50
20
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2.5
50
UNITS
°C / W
REV 1.0
1 2014/7/21




UNIKC

P2003BT Datasheet Preview

P2003BT Datasheet

N-Channel MOSFET

No Preview Available !

P2003BT
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
30
1 1.6 2.5
±250
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = 24V, VGS = 0V
VDS = 5V, VGS = 10V
120
1
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 10V, ID = 8A
VGS = 4.5V, ID = 6A
VDS = 5V, ID = 8A
17 20
28 32
17
DYNAMIC
Input Capacitance
Ciss
474
Output Capacitance
Coss VGS = 0V, VDS = 15V, f = 1MHz
184
Reverse Transfer Capacitance
Crss
115
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
2.7
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS=10V)
Qg(VGS=4.5V
Q)gs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS, ID = 8A
VDD = 15V, ID @ 8A,
VGEN = 10V, RG = 6Ω
11
4.7
1.5
3.7
11 18
17 26
37 54
20 30
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 8A, VGS = 0V
33
1
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 8 A,dIF / dt = 100 A/ms
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
17
8
2Independent of operating temperature.
UNITS
V
nA
mA
A
S
pF
Ω
nC
nS
A
V
nS
nC
REV 1.0
2 2014/7/21


Part Number P2003BT
Description N-Channel MOSFET
Maker UNIKC
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P2003BT Datasheet PDF






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