P2003BT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 20mΩ @VGS = 10V 39A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID 39 25 IDM 120 Avalanche Current IAS 21 Avalanche Energy L = 0.1mH EAS 22 Power Dissipation TC = 25 °C PD 50 TC = 100 °C 20 .