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UNIKC

P2003BEAA Datasheet Preview

P2003BEAA Datasheet

MOSFET

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P2003BEAA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 20mΩ @VGS = 10V
ID
25A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Tc = 25 °C
25
Continuous Drain Current
Tc = 100 °C
TA = 25 °C
ID
16
8
Pulsed Drain Current1
TA= 70 °C
IDM
6
60
Avalanche Current
IAS 17
Avalanche Energy
L =0.1mH
EAS
15
TC = 25 °C
20
Power Dissipation
TC = 100 °C
TA = 25 °C
PD
8
2
TA = 70 °C
1.3
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Steady-State
Junction-to-Case
Steady-State
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
RqJC
TYPICAL
MAXIMUM
60
6
UNITS
°C / W
REV 1.0
1 2014/7/30




UNIKC

P2003BEAA Datasheet Preview

P2003BEAA Datasheet

MOSFET

No Preview Available !

P2003BEAA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0V, ID = 250mA
30
Gate Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
1 1.8
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 55 °C
VDS = 5V, VGS = 10V
60
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 6A
VGS = 10V , ID = 8A
VDS = 10V, ID = 8A
28.2
17.6
16
DYNAMIC
Input Capacitance
Ciss
625
Output Capacitance
Coss
VGS = 0V, VDS = 15V, f = 1MHz
130
Reverse Transfer Capacitance
Crss
73
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
2.6
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS, ID = 8A
VDD= 15V,
ID @ 8A, VGEN = 10V, RG= 3Ω
12.1
6.3
2.1
3.1
12
12
20
13
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 8A, VGS = 0V
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
IF = 8A, dlF/dt = 100A / μS
30
16
2Independent of operating temperature.
2.5
±100
1
10
31
20
25
1
V
nA
mA
A
S
pF
Ω
nC
nS
A
V
nS
nC
REV 1.0
2 2014/7/30


Part Number P2003BEAA
Description MOSFET
Maker UNIKC
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