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UNIKC

P2003BDG Datasheet Preview

P2003BDG Datasheet

N-Channel MOSFET

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P2003BDG
N-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25V 20mΩ @VGS = 10V
ID
28A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 25
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC= 25 °C
TC= 100 °C
ID
IDM
28
18
90
Avalanche Current
IAS 23
Avalanche Energy
L=0.1mH
EAS
26
Power Dissipation
TC= 25 °C
TC= 100°C
PD
27
10
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
TYPICAL MAXIMUM UNITS
4.6 °C / W
REV 1.0
1 2014/5/12




UNIKC

P2003BDG Datasheet Preview

P2003BDG Datasheet

N-Channel MOSFET

No Preview Available !

P2003BDG
N-Channel Logic Level Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
VGoaltteagTehreshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS =20V, VGS = 0V
VDS =20V, VGS = 0V, TJ = 125°C
VDS = 5V, VGS = 10V
25
1
90
V
23
±100 nA
1
mA
10
A
Drain-Source On-State
Resistance1
RDS(ON)
VGS =10V, ID =15A
VGS =4.5V, ID =10A
14 20
25 31
Forward Transconductance1
gfs
VDS =5V, ID =15A
16 S
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 15V, f = 1MHz
470
161
pF
Reverse Transfer Capacitance
Crss
130
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
2.9
Ω
Total Gate Charge2
Gate-Source Charge2
Qg
VGS = 10V
VGS = 4.5V
Qgs
VDS =0.5V(BR)DSS, VGS = 10V,
ID = 15A
15
9
nC
3
Gate-Drain Charge2
Qgd
6
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
td(on)
10
tr
td(off)
VDS = 15V ,
ID15A, VGS = 10V,RGS = 6Ω
17
34
nS
Fall Time2
tf
27
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
28 A
Forward Voltage1
VSD IF = 15A, VGS = 0V
1.4 V
Reverse Recovery Time
Reverse Recovery Charge
trr VDS =13V,
Qrr IF = 15A, dlF/dt = 100A /ms
15.3 nS
4.5 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
REV 1.0
2 2014/5/12


Part Number P2003BDG
Description N-Channel MOSFET
Maker UNIKC
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P2003BDG Datasheet PDF






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