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P1825HDB Datasheet Preview

P1825HDB Datasheet

N-Channel Enhancement Mode MOSFET

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P1825HDB
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
250V
230mΩ @VGS = 10V
ID
18A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 250
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
18
11
51
Avalanche Current
IAS 9
Avalanche Energy
L = 1mH
EAS
40
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
74
29
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM UNITS
1.7
°C / W
62.5
REV 1.0 1 2016/8/9




UNIKC

P1825HDB Datasheet Preview

P1825HDB Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

P1825HDB
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
250
V
123
±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 250V, VGS = 0V
VDS = 200V, VGS = 0V , TJ = 125 °C
1
mA
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 9A
VGS = 10V, ID = 9A
VDS = 10V, ID = 9A
210 286
193 230
21 S
DYNAMIC
Input Capacitance
Ciss
788
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz 115 pF
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 10V ,VDS = 200V,
ID = 18A
VDS = 125V,ID @ 18A,
VGS = 10V, RGEN = 6Ω
14
24
3.3 nC
8.4
14
101
nS
104
79
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 18A, VGS = 0V
18 A
1V
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
trr
Qrr
IF = 18A, dl/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
158 nS
0.98 uC
REV 1.0 2 2016/8/9


Part Number P1825HDB
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 8 Pages
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