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P1825AT Datasheet Preview

P1825AT Datasheet

N-Channel MOSFET

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P1825AT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
250V
0.2Ω @VGS = 10V
ID
18A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current1
Pulsed Drain Current2
TC = 25 °C
TC = 100 °C
ID
IDM
18
8.5
72
Avalanche Current
IAS 15
Avalanche Energy
L = 1mH EAS 106
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
90
36
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited by package.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
1.39
62.5
UNITS
°C / W
Ver 1.0
1 2012/4/13




UNIKC

P1825AT Datasheet Preview

P1825AT Datasheet

N-Channel MOSFET

No Preview Available !

P1825AT
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-State
FRoerswisatradncTera1 nsconductance1
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 250V, VGS = 0V
VDS = 200V, VGS = 0V , TJ = 125 °C
VGS = 10V, ID = 9A
VDS = 10V, ID = 18A
250
2 2.7 4
±100
1
10
0.18 0.2
20
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 25V, f = 1MHz
VDS = 200V, VGS = 10V, ID = 9A
VDD = 125V,
ID @ 18A, VGS = 10V, RGEN = 6Ω
1810
153
33
57
9
26
31
215
73
118
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 18A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
VGS = 0V, IF = 18A,
dlF/dt = 100A / μS
210
1.3
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3 Limited by maximum junction temperature.
18
1.6
UNIT
V
nA
mA
Ω
S
pF
nC
nS
A
V
nS
μC
Ver 1.0
2 2012/4/13


Part Number P1825AT
Description N-Channel MOSFET
Maker UNIKC
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P1825AT Datasheet PDF






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