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UNIKC

P1825AD Datasheet Preview

P1825AD Datasheet

N-Channel Transistor

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P1825AD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
250V
200mΩ @VGS = 10V
ID
18A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
18
8
72
Avalanche Current
IAS 23
Avalanche Energy
L = 1mH EAS 261
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
69
27
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
1.8
62.5
UNITS
°C / W
Ver 1.1
1 2013-3-25




UNIKC

P1825AD Datasheet Preview

P1825AD Datasheet

N-Channel Transistor

No Preview Available !

P1825AD
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
250
2 2.5 4
±250
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = 250V, VGS = 0V
VDS = 200V, VGS = 0V , TJ = 125 °C
VDS = 10V, VGS = 10V
72
1
10
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 10V, ID = 9A
200
Forward Transconductance1
gfs
VDS = 10V, ID = 9A
9
DYNAMIC
Input Capacitance
Ciss
1700
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
162
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 200V, ID = 18A, VGS = 10V
VDD = 125V, ID @ 18A,
VGS = 10V , RGS = 25Ω
26
57
8
25
27
200
205
160
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 18A, VGS = 0V
18
1.6
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 18A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
198
1.2
2Independent of operating temperature.
UNIT
V
nA
mA
A
mΩ
S
pF
nC
nS
A
V
nS
μC
Ver 1.1
2 2013-3-25


Part Number P1825AD
Description N-Channel Transistor
Maker UNIKC
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P1825AD Datasheet PDF






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