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P1820HDB
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
200V
157mΩ @VGS = 10V
ID 18A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 200
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
18 9 30
Avalanche Current
IAS 12
Avalanche Energy
L = 1mH
EAS
72
Power Dissipation
TC = 25 °C TC = 100 °C
PD
83 33
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC RqJA
TYPICAL
MAXIMUM UNITS 1.5 °C / W 62.5
REV 1.
P1820HDB Datasheet
