P1650GTF Datasheet - UNIKC

P1650GTF N-Channel MOSFET

P1650GTF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 500V 360mΩ @VGS = 10V 16A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1,2 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C ID 16 10 IDM 60 IAS 9 EAS 410 Power Dissipation TC = 25 °C PD TC = 100 °C 56.8 22.7 .

P1650GTF Datasheet (756.96 KB)