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P1610ATF
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
110V
16mΩ @VGS = 10V
34A
TO-220F
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS
±20
Continuous Drain Current2 Pulsed Drain Current1,2
TC = 25 °C
ID
34
TC = 100 °C
21
IDM
120
Avalanche Current
IAS
12
Avalanche Energy
L = 1mH
EAS
72
Power Dissipation
TC = 25 °C
PD
48
TC = 100 °C
19
Mounting Torque3
Machine
5
Screw
0.49
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
mJ W Kgf.cm N.m °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case
Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
P1610ATF Datasheet
