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P1606BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 18.5mΩ @VGS = 10V
ID 42A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current2 Pulsed Drain Current1,2
TC = 25 °C TC = 100 °C
ID IDM
42 26 110
Avalanche Current
IAS 41
Avalanche Energy
L = 0.1mH
EAS
85
Power Dissipation
TC = 25 °C TC = 100 °C
PD
62 25
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed.
P1606BD Datasheet
