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UNIKC

P1603BV Datasheet Preview

P1603BV Datasheet

N-Channel MOSFET

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P1603BV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 16mΩ @VGS = 10V
ID
10A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
10
8
55
Avalanche Current
IAS 23
Avalanche Energy
L = 0.1mH
EAS
26
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2.6
1.6
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
25
50
UNITS
°C / W
Ver 1.0
1 2012/4/13




UNIKC

P1603BV Datasheet Preview

P1603BV Datasheet

N-Channel MOSFET

No Preview Available !

P1603BV
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V , TJ = 125 °C
VDS = 10V, VGS = 10V
VGS = 4.5V, ID = 6A
VGS = 10V, ID = 8A
VDS = 5V, ID = 8A
30
1.0 1.8 2.5
±100
1
10
55
19.4 25.0
11.8 16.0
40
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 15V, f = 1MHz
560
179
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Rg
Qg(VGS = 10V)
Qg(VGS = 4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, f = 1MHz
VDS = 0.5V(BR)DSS,
ID = 8A, VGS = 10V
VDS = 15V, RL = 1.5Ω
VGS = 10V, ID @ 10A, RGEN = 6Ω
100
2
12
5
2.1
3.5
7
29
45
18
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 8A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 8A, dlF/dt = 100A / mS
24
29
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
2.6
1
UNIT
V
nA
mA
A
mΩ
S
pF
Ω
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/4/13


Part Number P1603BV
Description N-Channel MOSFET
Maker UNIKC
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P1603BV Datasheet PDF






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