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UNIKC

P1603BEBB Datasheet Preview

P1603BEBB Datasheet

MOSFET

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P1603BEBB
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 16mΩ @VGS = 10V
ID3
24A
PDFN 2X2S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current3
Pulsed Drain Current1
Avalanche Current
TC = 25 °C
TC = 100 °C
TA = 25 °C
TA= 70 °C
ID
IDM
IAS
24
15
8.2
6.6
70
20.5
Avalanche Energy
L = 0.1 mH
EAS
21
TC = 25 °C
15
Power Dissipation
TC = 100 °C
TA= 25 °C
TA= 70°C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
6.2
1.8
1.1
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Ambient2
RqJA
Junction-to-Case
RqJC
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Coppe.
3Package limitation current is 18A.
MAXIMUM
67
8
UNITS
°C / W
REV 1.1
1 2014/7/22




UNIKC

P1603BEBB Datasheet Preview

P1603BEBB Datasheet

MOSFET

No Preview Available !

P1603BEBB
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
ID(ON)
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS =24V, VGS = 0V
VDS =20V, VGS = 0V, TJ = 125°C
VDS = 5V, VGS = 10V
30
1 1.4 2.5
V
±100 nA
1
mA
10
70 A
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 6.8A
VGS =10V, ID = 8A
VDS =10V, ID = 8A
16.2 25
13.4 16
30
S
DYNAMIC
Input Capacitance
Ciss
516
Output Capacitance
Coss VGS = 0V, VDS = 15V, f = 1MHz
86
Reverse Transfer Capacitance
Crss
67
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
2.6
Total Gate Charge2
Gate-Source Charge2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
VDS = 15V , ID = 8A
13.4
7.4
1.6
Gate-Drain Charge2
Qgd
3.3
Turn-On Delay Time2
td(on)
12
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 15V
ID @ 8A, VGEN = 10V, RG = 6Ω
10
27
Fall Time2
tf
10
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 8A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 8A, dlF/dt = 100A / μS
11.4
2.7
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Package limitation current is 18A.
24
1
pF
Ω
nC
nS
A
V
nS
nC
REV 1.1
2 2014/7/22


Part Number P1603BEBB
Description MOSFET
Maker UNIKC
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P1603BEBB Datasheet PDF






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