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P1603BEBA - MOSFET

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Part number P1603BEBA
Manufacturer UNIKC
File Size 431.34 KB
Description MOSFET
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Full PDF Text Transcription for P1603BEBA (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for P1603BEBA. For precise diagrams, and layout, please refer to the original PDF.

P1603BEBA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 16mΩ @VGS = 10V ID3 24A PDFN 2X2S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise N...

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24A PDFN 2X2S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 TC = 25 °C 24 Continuous Drain Current3 Pulsed Drain Current1 Avalanche Current TC = 100 °C TA = 25 °C TA= 70 °C ID IDM IAS 15 8.8 7.1 70 20.5 Avalanche Energy L = 0.1 mH EAS 21 TC = 25 °C 15 Power Dissipation TC = 100 °C TA= 25 °C TA= 70°C Operating Junction & Storage Temperature Range PD Tj, Tstg 6 2 1.