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UNIKC

P1603BEB Datasheet Preview

P1603BEB Datasheet

MOSFET

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P1603BEB
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 16mΩ @VGS = 10V
ID3
21A
PDFN 2X2S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
TC = 25 °C
21
Continuous Drain Current3
Pulsed Drain Current1
Avalanche Current
TC = 100 °C
TA = 25 °C
TA= 70 °C
ID
IDM
IAS
17
8
6
60
18
Avalanche Energy
L = 0.1 mH
EAS
16
TC = 25 °C
16
Power Dissipation
TC = 100 °C
TA= 25 °C
TA= 70°C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
10
2
1.2
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Ambient2
RqJA
Junction-to-Case
RqJC
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Coppe.
3Package limitation current is 12A.
MAXIMUM
65
7.6
UNITS
°C / W
REV 1.1
1 2014/7/22




UNIKC

P1603BEB Datasheet Preview

P1603BEB Datasheet

MOSFET

No Preview Available !

P1603BEB
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
30
1 1.7 2.5
V
±100 nA
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS =24V, VGS = 0V
VDS =20V, VGS = 0V, TJ = 125°C
VDS = 10V, VGS = 10V
55
1
mA
10
A
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 5A
VGS =10V, ID = 7A
VDS =10V, ID = 7A
22 25
13 16
35 S
DYNAMIC
Input Capacitance
Ciss
560
Output Capacitance
Coss VGS = 0V, VDS = 15V, f = 1MHz
130
Reverse Transfer Capacitance
Crss
75
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.5
Total Gate Charge2
Gate-Source Charge2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
VDS = 0.5V(BR)DSS, ID = 7A
12
6
2.1
Gate-Drain Charge2
Qgd
3.5
Turn-On Delay Time2
td(on)
7
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 15V
ID @ 7A, VGEN = 10V, RG = 6Ω
29
45
Fall Time2
tf
18
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 7A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 7A, dlF/dt = 100A / μS
24
29
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Package limitation current is 12A.
21
1
pF
Ω
nC
nS
A
V
nS
nC
REV 1.1
2 2014/7/22


Part Number P1603BEB
Description MOSFET
Maker UNIKC
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P1603BEB Datasheet PDF






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