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UNIKC

P1603BD Datasheet Preview

P1603BD Datasheet

N-Channel MOSFET

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P1603BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 14mΩ @VGS = 10V
ID
40A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC= 25 °C
TC= 100 °C
ID
IDM
40
32
150
Avalanche Current
IAS 23
Avalanche Energy
L=0.1mH
EAS
26
Power Dissipation
TC= 25 °C
TC= 100°C
PD
42
27
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
3
62.5
UNITS
°C / W
REV 1.0 1 2014/5/8




UNIKC

P1603BD Datasheet Preview

P1603BD Datasheet

N-Channel MOSFET

No Preview Available !

P1603BD
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
VGoaltteagTehreshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS =24V, VGS = 0V
VDS =20V, VGS = 0V, TJ = 125°C
30
1
1.7 2.5
±100
1
10
V
nA
mA
Drain-Source On-State
Resistance1
RDS(ON)
VGS =10V, ID =8A
VGS =4.5V, ID =6A
13 14
20 23
Forward Transconductance1
On-State Drain Current1
gfs
ID(ON)
VDS =15V, ID =8A
VDS = 10V, VGS = 10V,
21
150
S
A
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 15V, f = 1MHz
562
159
pF
Reverse Transfer Capacitance
Crss
95
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.9
Ω
Total Gate Charge2
Gate-Source Charge2
Qg
VGS = 10V
VGS = 4.5V
Qgs
VDS = 15V, VGS = 10V,
ID = 8A
12.3
5.2
1.8
Gate-Drain Charge2
Qgd
3.6
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
td(on)
tr
td(off)
VDS = 15V ,
ID8A, VGS = 10V
21
9
3
Fall Time2
tf
5
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 8A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 8A, dlF/dt = 100A /ms
24
14
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
40
1
nC
nS
A
V
nS
nC
REV 1.0 2 2014/5/8


Part Number P1603BD
Description N-Channel MOSFET
Maker UNIKC
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P1603BD Datasheet PDF






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