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UNIKC

P1520ETF Datasheet Preview

P1520ETF Datasheet

N-Channel MOSFET

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P1520ETF
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
200V
198mΩ @VGS = 10V
ID
15A
TO-220F
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 200
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
15
9.3
45
Avalanche Current
IAS 16.5
Avalanche Energy
L = 1mH
EAS 136
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
32
13
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
3.8
62.5
UNITS
°C / W
REV 1.0
1 2017/1/22




UNIKC

P1520ETF Datasheet Preview

P1520ETF Datasheet

N-Channel MOSFET

No Preview Available !

P1520ETF
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
200
1 1.8
3
V
±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 125 °C
1
mA
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 7.5A
VGS = 10V, ID = 7.5A
VDS = 10V, ID = 7.5A
165 218
153 198
14
S
DYNAMIC
Input Capacitance
Ciss
869
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
150
pF
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 160V, ID = 15A, VGS = 10V
VDS = 100V, ID @ 15A,
VGS = 10V,RGEN = 25Ω
22
29
2.9
10
29
133
157
111
nC
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 15A, VGS = 0V
15 A
1V
Diode Reverse Recovery Time
trr
Diode Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
IF = 15A , dI/dt= 100A/ms
165 nS
0.87 uC
3Pulse width limited by maximum junction temperature.
REV 1.0
2 2017/1/22


Part Number P1520ETF
Description N-Channel MOSFET
Maker UNIKC
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P1520ETF Datasheet PDF






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