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P1504HV Datasheet Preview

P1504HV Datasheet

Dual N-Channel MOSFET

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P1504HV
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 23mΩ @VGS = 10V
ID
7A
SOP-8
100% UIS tested
100% Rg tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 40
Gate-Source Voltage
VGS ±25
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA= 100 °C
ID
IDM
7
4
30
Avalanche Current
IAS 28
Avalanche Energy
L = 0.1 mH
EAS
41
Power Dissipation
TA = 25 °C
TA= 100°C
PD
2
0.8
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Lead
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJL
RqJA
TYPICAL
MAXIMUM
25
62.5
UNITS
°C / W
REV 1.0
1 2014/9/19




UNIKC

P1504HV Datasheet Preview

P1504HV Datasheet

Dual N-Channel MOSFET

No Preview Available !

P1504HV
Dual N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
ID(ON)
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±25V
VDS = 32V, VGS = 0V
VDS = 30V, VGS = 0V, TJ = 70 °C
VDS = 5V, VGS = 10V
40
1.5 2.3 3.0
V
±100 nA
1
mA
10
30 A
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 7V, ID = 6.5A
VGS = 10V, ID = 6.5A
22 28
20 23
Forward Transconductance1
gfs
VDS = 5V, ID = 6.5A
30 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 20V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 0.5V(BR)DSS, VGS = 10V,
ID = 6.5A
VDS = 0.5V(BR)DSS,
ID @ 6.5A, VGS = 10V, RG = 6Ω
1132
222
146
1.6
23
8
4
10
20
35
52
pF
Ω
nC
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Current
Forward Voltage1
IS
VSD IF = 6.5A, VGS = 0V
7A
1.3 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 6.5A, dlF/dt = 100A /mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
25 nS
18 nC
REV 1.0
2 2014/9/19


Part Number P1504HV
Description Dual N-Channel MOSFET
Maker UNIKC
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