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UNIKC

P1504EIS Datasheet Preview

P1504EIS Datasheet

MOSFET

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P1504EIS
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
15mΩ @VGS = -10V
ID
-38A
TO-251(S)
100% Rg tested
100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -40
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
-38
-24
-150
Avalanche Current
IAS -44
Avalanche Energy
L = 0.1mH
EAS
96.8
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
34
14
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Junction-to-Case
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
RqJC
TYPICAL
MAXIMUM
75
3.6
UNITS
°C / W
REV 1.0
1 2014/8/18




UNIKC

P1504EIS Datasheet Preview

P1504EIS Datasheet

MOSFET

No Preview Available !

P1504EIS
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
-40
-1.5 -2.2 -3
±100
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
IDSS
RDS(ON)
VDS = -32V, VGS = 0V
VDS = -30V, VGS = 0V , TJ = 125 °
VGS = -4.5VC, ID = -15A
VGS = -10V, ID = -20A
1
10
20 29
12 15
Forward Transconductance1
On-State Drain Current1
gfs
ID(ON)
VDS = -5V, ID = -20A
VDS = -5V, VGS = -10V
-150
53
DYNAMIC
Input Capacitance
Ciss
2870
Output Capacitance
Coss VGS = 0V, VDS = -20V, f = 1MHz
273
Reverse Transfer Capacitance
Crss
238
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 0.5V(BR)DSS,VGS = -10V,
ID = -20A
VDS = -20V, ID @ -20A,
VGS = -10V, RGEN =6Ω
4.4
55
12
15
13
31
72
40
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = -20A, VGS = 0V
-38
-1.3
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -20A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
22
14
2Independent of operating temperature.
UNITS
V
nA
mA
S
A
pF
Ω
nC
nS
A
V
nS
nC
REV 1.0
2 2014/8/18


Part Number P1504EIS
Description MOSFET
Maker UNIKC
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