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P1504BVG Datasheet Preview

P1504BVG Datasheet

N-Channel MOSFET

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P1504BVG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 15mΩ @VGS = 10V
ID
9A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
TA = 25 °C
TA = 70 °C
ID
IDM
IAS
9
7.5
35
32
Avalanche Energy
L = 0.1mH
EAS
52
Power Dissipation
TA= 25 °C
TA =70 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
2.5
1.6
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
25
50
UNITS
°C / W
REV 1.0
1 2014/9/19




UNIKC

P1504BVG Datasheet Preview

P1504BVG Datasheet

N-Channel MOSFET

No Preview Available !

P1504BVG
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
Drain-Source On-State
Resistance1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 20V, VGS = ±20V
VDS = 32V, VGS = 0V
VDS = 30V, VGS = 0V, TJ = 125 °C
VDS = 10V, VGS = 10V
VGS = 10V, ID = 9A
40
1.6
35
1.9 3
±250
1
10
12.7 15
V
nA
mA
A
Forward Transconductance1
gfs
VDS = 20V, ID = 9A
60 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0V, VDS = 15V, f = 1MHz
1183
252
168
pF
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
VDS = 20V, VGS = 10V,
ID = 9A
Qgd
24.8
7.4
4.6
Turn-On Delay Time2
td(on)
32
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 20V, ID @ 9A,
VGS = 10V, RGEN = 6Ω
20
70
Fall Time2
tf
26
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS(TJ = 25 °C)
Continuous Current
IS
Pulsed Body-Diode Current3
ISM
Forward Voltage1
VSD IF = 9A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 9A, dlF/dt = 100A /mS
27
20
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
9
35
1.26
nC
nS
A
V
nS
nC
REV 1.0
2 2014/9/19


Part Number P1504BVG
Description N-Channel MOSFET
Maker UNIKC
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