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UNIKC

P1504BDG Datasheet Preview

P1504BDG Datasheet

N-Channel MOSFET

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P1504BDG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 15mΩ @VGS = 10V
ID
40A
TO-252
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 40
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
40
25
85
Avalanche Current
IAS 22
Avalanche Energy
L = 0.3mH
EAS
72
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
42
17
Operating Junction & Storage Temperature Range
Lead Temperature(1/16” from case for 10 sec.)
TJ, TSTG
TL
-55 to 150
275
UNITS
V
A
mJ
W
°C
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
3
75
UNITS
°C / W
Ver 1.1
1 2013-3-20




UNIKC

P1504BDG Datasheet Preview

P1504BDG Datasheet

N-Channel MOSFET

No Preview Available !

P1504BDG
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
40
1.7 2
3
±250
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = 32V, VGS = 0V
VDS = 30V, VGS = 0V , TC = 125 °C
VDS = 10V, VGS = 10V
85
1
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 7V, ID = 10A
VGS = 10V, ID = 20A
VDS = 10V, ID = 20A
18 27
12.5 15
25
DYNAMIC
Input Capacitance
Ciss
1145
Output Capacitance
Coss VGS = 0V, VDS = 10V, f = 1MHz
255
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS, VGS = 10V,
ID = 10A
VDS = 20V, RL = 1Ω
ID@ 1A, VGS = 10V, RGEN = 6Ω
95
23
3.6
3
3.2
10.8
17.1
5.3
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF =IS, VGS = 0V
32
1.3
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = IS, dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
60
43
2Independent of operating temperature.
UNIT
V
nA
mA
A
mΩ
S
pF
nC
nS
A
V
nS
nC
Ver 1.1
2 2013-3-20


Part Number P1504BDG
Description N-Channel MOSFET
Maker UNIKC
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P1504BDG Datasheet PDF






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