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UNIKC

P1503HK Datasheet Preview

P1503HK Datasheet

MOSFET

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P1503HK
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 15mΩ @VGS = 10V
ID
24A
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
24
ID 15
IDM 72
Continuous Drain Current
TA = 25 °C
TA = 70 °C
7.6
ID 6
Avalanche Current
IAS 20
Avalanche Energy
L = 0.1mH
EAS 21
Power Dissipation
TC = 25 °C
TC = 100 °C
15
PD 6.2
Power Dissipation
TA = 25 °C
TA = 70 °C
1.5
PD 1
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Case
Junction-to-Ambient2
Steady-State
Steady-State
RqJC
RqJA
8
°C / W
80
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C. The value in any given application depends on the user's specific board design.
REV 1.0 1 2014/7/7




UNIKC

P1503HK Datasheet Preview

P1503HK Datasheet

MOSFET

No Preview Available !

P1503HK
Dual N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
30
1 1.5 3
V
±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 24V, VGS = 0V ,
VDS = 20V, VGS = 0V , TJ = 55 °C
1
mA
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 11A
VGS = 10V, ID = 11A
VDS = 5V, ID = 11A
15 20
10 15
33 S
DYNAMIC
Input Capacitance
Ciss
1020
Output Capacitance
Coss VGS = 0V, VDS = 15V, f = 1MHz
126 pF
Reverse Transfer Capacitance
Gate Resistance
Crss
Rg VGS = 0V, VDS = 0V, f = 1MHz
103
1.6 Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
VGS=10V
VGS=4.5V
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS, ID = 11A,
VGS = 10V
VDS = 15V,ID @ 11A, VGS=10V,
RGEN= 6Ω
20
10.3
nC
3.6
4.8
9.6
25.8
nS
44.4
25.2
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 11A, VGS = 0V
24 A
1.3 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 11A, dlF/dt = 100A /μS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
12 nS
3 nC
2Independent of operating temperature.
REV 1.0 2 2014/7/7


Part Number P1503HK
Description MOSFET
Maker UNIKC
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