Click to expand full text
P1503HK
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 15mΩ @VGS = 10V
ID 24A
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
24 ID 15 IDM 72
Continuous Drain Current
TA = 25 °C TA = 70 °C
7.6 ID 6
Avalanche Current
IAS 20
Avalanche Energy
L = 0.1mH
EAS 21
Power Dissipation
TC = 25 °C TC = 100 °C
15 PD 6.2
Power Dissipation
TA = 25 °C TA = 70 °C
1.
P1503HK Datasheet
