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P1308ATFG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
75V
13mΩ @VGS = 10V
48A
TO-220F-3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS
±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C
ID
48
TC = 100 °C
30
IDM
160
Avalanche Current
IAS
40
Avalanche Energy
L = 0.1mH
EAS
80
Power Dissipation
TC = 25 °C
PD
TC = 100 °C
54 21.7
Operating Junction & Storage Temperature Range Lead Temperature ( 1/16" from case for 10 sec.)
TJ, TSTG TL
-55 to 150 275
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient Case-to-Heatsink 1Pulse width limited by maximum junction temperature.
P1308ATFG Datasheet
