P1060ETFS - N-Channel MOSFET

UNIKC

Download the P1060ETFS datasheet PDF. This datasheet also covers the P1060ETF variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

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P1060ETFS n-channel mosfet by UNIKC - Datasheet Preview — Note: The manufacturer provides a single datasheet file (P1060ETF-UNIKC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	P1060ETFS
Manufacturer	UNIKC
File Size	850.05 KB
Description	N-Channel MOSFET
Datasheet	P1060ETFS Datasheet

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Other Datasheets by UNIKC

Part Number	Description
P1060ETF	N-Channel MOSFET
P1060AT	N-Channel MOSFET
P1060ATF	N-Channel MOSFET
P1060ATFS	N-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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P1060ETF / P1060ETFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 0.77Ω @VGS = 10V 10A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1,2 Avalanche Current3 TC= 25 °C TC= 100 °C ID 10 6 IDM 30 IAS 3.5 Avalanche Energy3 EAS 61 Power Dissipation TC= 25 °C TC= 100°C PD 39 15 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction temperature.