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P1060ETF / P1060ETFS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
600V
0.77Ω @VGS = 10V
10A
TO-220F TO-220FS
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
±30
Continuous Drain Current2
Pulsed Drain Current1,2 Avalanche Current3
TC= 25 °C TC= 100 °C
ID
10 6
IDM
30
IAS
3.5
Avalanche Energy3
EAS
61
Power Dissipation
TC= 25 °C TC= 100°C
PD
39 15
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Junction-to-Case 1Pulse width limited by maximum junction temperature.
P1060ETF Datasheet
