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P1006BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 10mΩ @VGS = 10V
ID 66A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain Current2 Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
66 42 150
Avalanche Current
IAS 38.5
Avalanche Energy
L =0.1mH
EAS
74
Power Dissipation
TC = 25 °C TC = 100 °C
PD
96 38
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction temperature. 2 Package limitation current is 30A.
SYMBOL RqJA RqJC
TYPICAL
MAXIMUM 62.5 1.
P1006BD Datasheet
