Click to expand full text
P1003EVG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS -30V RDS(ON) 10.5mΩ @VGS = -10V ID -13A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Power Dissipation
1
SYMBOL VDS VGS
LIMITS -30 ±25 -13 -9 -50 -49 120 2.5 1.6 -55 to 150
UNITS V
TA = 25 ° C TA = 70 ° C
ID IDM IAS
A
L = 0.1mH TA = 25 ° C TA = 70 ° C
EAS PD TJ, TSTG
mJ W ° C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient
1
SYMBOL RqJC RqJA
TYPICAL
MAXIMUM 25 50
UNITS ° C/W
Pulse width limited by maximum junction temperature.
Ver 1.
P1003EVG Datasheet
