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UNIKC

P0925AD Datasheet Preview

P0925AD Datasheet

N-Channel Transistor

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P0925AD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
250V
0.48Ω @VGS = 10V
ID
9A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Current
TC = 25 °C
TC = 100 °C
ID
IDM
IAS
9
5.4
36
9
Avalanche Energy
L =1.8mH
EAS
72
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
73
29
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
SYMBOL
RqJC
TYPICAL
MAXIMUM UNITS
1.7 °C / W
REV 1.2
1 2015/12/29




UNIKC

P0925AD Datasheet Preview

P0925AD Datasheet

N-Channel Transistor

No Preview Available !

P0925AD
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 250V, VGS = 0V
VDS = 200V, VGS = 0V, TJ = 125 °C
VGS = 10V, ID = 4.5A
VDS = 10V, ID = 4.5A
250
2 2.6 4
±100
1
10
0.39 0.48
11
V
nA
mA
Ω
S
DYNAMIC
Input Capacitance
Ciss
793
Output Capacitance
Coss
VGS = 0V, VDS = 25V, f = 1MHz
65
Reverse Transfer Capacitance
Crss
22
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
Qgd
VGS = 10 V,
VDS = 200V, ID = 9A
29.7
4
11.3
Turn-On Delay Time2
td(on)
12
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 125V,
ID @ 9A, VGS = 10V, RGEN = 6Ω
39
46
Fall Time2
tf
53
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current2
IS
Forward Voltage1
VSD IF = 4.5A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 9A, dlF/dt = 100A / μS
143
0.6
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
9
1.6
pF
nC
nS
A
V
nS
uC
REV 1.2
2 2015/12/29


Part Number P0925AD
Description N-Channel Transistor
Maker UNIKC
Total Page 8 Pages
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