The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
P0925AD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
250V
0.48Ω @VGS = 10V
ID 9A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1 Avalanche Current
TC = 25 °C TC = 100 °C
ID
IDM IAS
9 5.4 36 9
Avalanche Energy
L =1.8mH
EAS
72
Power Dissipation
TC = 25 °C TC = 100 °C
Operating Junction & Storage Temperature Range
PD Tj, Tstg
73 29 -55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed.
SYMBOL RqJC
TYPICAL
MAXIMUM UNITS 1.7 °C / W
REV 1.
P0925AD Datasheet
