P0860ETFS - N-Channel MOSFET

UNIKC

Download the P0860ETFS datasheet PDF. This datasheet also covers the P0860ETF variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

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P0860ETFS n-channel mosfet by UNIKC - Datasheet Preview — Note: The manufacturer provides a single datasheet file (P0860ETF-UNIKC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	P0860ETFS
Manufacturer	UNIKC
File Size	841.97 KB
Description	N-Channel MOSFET
Datasheet	P0860ETFS Datasheet

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Other Datasheets by UNIKC

Part Number	Description
P0860ETF	N-Channel MOSFET
P0803BDG	MOSFET
P0803BVG	N-Channel MOSFET
P0804BD	MOSFET
P0804BD8	MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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P0860ETF / P0860ETFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 1.05Ω @VGS = 10V 8A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C ID IDM IAS EAS 8 5 25 3.5 61.2 Power Dissipation TC = 25 °C PD 36 TC = 100 °C 14 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Ensure that the channel temperature does not exceed 150°C.