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P0808ATG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
75V 8mΩ @VGS = 10V
ID 89A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current1 Pulsed Drain Current2
TC = 25 °C TC = 100 °C
ID IDM
89 63 250
Avalanche Current
IAS 85
Avalanche Energy
L = 0.1mH
EAS
362
Power Dissipation
TC = 25 °C TC = 100 °C
PD
160 80
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Case-to-Heatsink 1Pulse width limited by maximum junction temperature. 2Limited by package.
SYMBOL RqJC RqCS
TYPICAL 0.5
MAXIMUM UNITS 0.94 °C / W
Ver 1.
P0808ATG Datasheet
