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P0660ETFS - N-Channel MOSFET

Download the P0660ETFS datasheet PDF. This datasheet also covers the P0660ETF variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (P0660ETF-UNIKC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number P0660ETFS
Manufacturer UNIKC
File Size 852.82 KB
Description N-Channel MOSFET
Datasheet download datasheet P0660ETFS Datasheet

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Other Datasheets by UNIKC

Part Number Description
P0660ETF N-Channel MOSFET
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P0660ATF N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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P0660ETF / P0660ETFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 1.3Ω @VGS = 10V 6A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C ID IDM IAS EAS 6 3.8 20 3.5 61.2 Power Dissipation TC = 25 °C PD 32 TC = 100 °C 13 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Ensure that the channel temperature does not exceed 150°C.