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UM6116-5 - 2K x 8 High Speed CMOS SRAM

Description

The UM6116 is a 16,384-bit static random access memory organized as 2048 words by 8 bits and operates from a signle 5 volt supply.

It is built with UMC~s high performance CMOS process.

provides low standby current and high-reliability.

Features

  • Single 5V supply and high density 24 pin package.
  • High speed: Fast access time 55ns (max. ).
  • Low power standby and Standby: 5/lW (typ. ) Low power operation Operation: 250mW (typ. ).
  • Completely static RAM: No clock or timing strobe required.
  • Directly TTL compatible: All input and output.
  • Pin compatible with standard 16K EPROM/Mask ROM.
  • Equal access and cycle time General.

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Datasheet Details

Part number UM6116-5
Manufacturer UMC
File Size 175.27 KB
Description 2K x 8 High Speed CMOS SRAM
Datasheet download datasheet UM6116-5 Datasheet

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Other Datasheets by UMC

Part Number Description
UM6116-2 2K x 8 High Speed CMOS SRAM
UM6116-25 (UM6116-35 / UM6116-45) 2k x 8 High Speed CMOS SRAM
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UM6116-V Wide Voltage 2k x 8 CMOS SRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SUNIO UM6116-5 x 8 High Speed CMOS SRAM Features • Single 5V supply and high density 24 pin package • High speed: Fast access time 55ns (max.) • Low power standby and Standby: 5/lW (typ.) Low power operation Operation: 250mW (typ.) • Completely static RAM: No clock or timing strobe required • Directly TTL compatible: All input and output • Pin compatible with standard 16K EPROM/Mask ROM • Equal access and cycle time General Description The UM6116 is a 16,384-bit static random access memory organized as 2048 words by 8 bits and operates from a signle 5 volt supply. It is built with UMC~s high performance CMOS process. Six-transistor full CMOS memory cell provides low standby current and high-reliability.
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