PH2931-I3 Datasheet | Tyco Electronics

Features NPN Silicon Power Transistor mon Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Hermetic‘ Fle WCeramic Package Matching Absolute Maximum Ratinas at 25°C I Parameter Collector-Emitter Voltage Emitter-Base Voltage 1 Symbol V CES V ES0 ‘c P TOT T, T STG Rating 80 3.0 12 580 200 -65 to +200 1 Units C+!:Ti ER I .003~.031 Collector Current (Peak) Total Power Dissipation Junction Temperature Storage Temperature A W “C “C UNLESS OTELRWISE NDTE% TOLERANCES ARE (1.52’.05) INCHES (M,LLIMET~~S .060i.DOE f t.005’ = 13MM) Electrical Characteristics at 25°C Specifications Subject to Change Without Notice. Radar Pulsed Power Transistor, 135W PH2931-135s v2.00 RF Test Fixture PC BOARD, ROGERS 6010.5 .025’ ELECTROLYTIC CAPACITOR 50 UF 50 V MALLORY TTZOMSOA SMA CONNECTOR CHIP CAPACITOR, i ALUMINUM 73050255-09 COPPER 73050256-04 BOARD CARRIER BRASS 2 PLACk 73050257-13 VIEW Test Fixture PC Board Dimensions...