The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
( DataSheet : www.DataSheet4U.com )
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF158/D
The RF TMOS Line
Power Field Effect Transistor
N–Channel Enhancement Mode
• Guaranteed 28 Volt, 500 MHz Performance Output Power = 2.0 Watts Minimum Gain = 16 dB (Min) Efficiency = 55% (Typ) • Facilitates Manual Gain Control, ALC and Modulation Techniques • 100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR • Excellent Thermal Stability, Ideally Suited for Class A Operation Designed for wideband large–signal amplifier and oscillator applications to 500 MHz.
MRF158
To 500 MHz, 2 W, 28 V TMOS BROADBAND RF POWER FET
D
G CASE 305A–01, STYLE 2 S
MAXIMUM RATINGS
Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.
MRF158 Datasheet
