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MRF154 - N-CHANNEL BROADBAND RF POWER MOSFET

Key Features

  • er is strongly recommended between the device mounting surfaces and the main heatsink. It should be at least 1/4″ thick and extend at least one inch from the flange edges. A thin layer of thermal compound in all interfaces is, of course, essential. The recommended torque on the 4.
  • 40 mounting screws should be in the area of 4.
  • 5 lbs.
  • inch, and spring type lock washers along with flat washers are recommended. For die temperature calculations, the ∆ temperature from a corne.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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( DataSheet : www.DataSheet4U.com ) SEMICONDUCTOR TECHNICAL DATA Order this document by MRF154/D The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET • Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 17 dB (Typ) Efficiency = 45% (Typ) Designed primarily for linear large–signal output stages in the 2.0 – 100 MHz frequency range. MRF154 600 W, 50 V, 80 MHz N–CHANNEL BROADBAND RF POWER MOSFET D G S CASE 368–03, STYLE 2 (HOG PAC) MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage Gate–Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGO VGS ID PD Tstg TJ Value 125 125 ± 40 60 1350 7.