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MAAM000056 - RF Driver Amplifier

Download the MAAM000056 datasheet PDF. This datasheet also covers the MAAM-000056 variant, as both devices belong to the same rf driver amplifier family and are provided as variant models within a single manufacturer datasheet.

Description

M/A-COM’s MAAMSS0056 RF driver amplifier is a two stage GaAs MMIC which exhibits exceptional linearity performance as well as featuring high gain in a lead-free SOIC-8EP surface mount plastic package.

The device runs off a single +5 volt supply and draws 190 mA typically.

Features

  • Broadband Operation.
  • Output Intercept Point Greater than +40 dBm.
  • Excellent ACPR performance.
  • High Efficiency.
  • Lead-Free SOIC-8EP Package.
  • 100% Matte Tin Plating over Copper.
  • Halogen-Free “Green” Mold Compound.
  • RoHS.
  • Compliant and 260°C Reflow Compatible www. DataSheet4U. com MAAMSS0056 V1 Functional Block Diagram.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MAAM-000056_TycoElectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
RoHS Compliant RF Driver Amplifier 250 - 4000 MHz Features • Broadband Operation • Output Intercept Point Greater than +40 dBm • Excellent ACPR performance • High Efficiency • Lead-Free SOIC-8EP Package • 100% Matte Tin Plating over Copper • Halogen-Free “Green” Mold Compound • RoHS* Compliant and 260°C Reflow Compatible www.DataSheet4U.com MAAMSS0056 V1 Functional Block Diagram Description M/A-COM’s MAAMSS0056 RF driver amplifier is a two stage GaAs MMIC which exhibits exceptional linearity performance as well as featuring high gain in a lead-free SOIC-8EP surface mount plastic package. The device runs off a single +5 volt supply and draws 190 mA typically. The MAAMSS0056 is fabricated using a high reliability GaAs HBT process to realize low current and high power functionality.
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