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RF MOSFET 2 - 175 MHz
Features
l l l l l
Power
Transistor,
lOW, 28V
DU2810S
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Low Noise Floor
Absolute Maximum Ratinas at 25°C
( Parameter 1 Drain-SourceVoltage Gate-Source Drain-Source Voltage Current 1 Symbol ) V, V OS ‘0s PO 1 T, T ST0 eJC ) 1 1 Rating 65 20 2.8 35’ 200 -65to+150 2 1 1 Units I v
V
1 I
A W “C “C “Cl-W 1
Power Dissipation ( JunctionTemperature StorageTemperature Thermal Resistance
Typical Device mpedance
Frequency (MHz) 30
50
*,, (OHMS)
27.0 -j 11.0
24.0 - j 15.0
*,onD (OHMS)
23.0 - j 3.0 19.0 - j 5.0
6.0 j 9.0 -j 5.0 14.0 ,I
100
18.0 -j 18.
DU2810S Datasheet
