eak Power (3 µsec max.) “S” Series Burn-in Temperature (Case) -62° to +125°C 125°C +17 Volts +13 dBm 50 mW 0.5 W 125°C Thermal Data: Vcc = 15 Vdc Thermal Resistance θjc Transistor Power Dissipation Pd Junction Temperature Rise Above Case Tjc 182°C/W 0.288 W 52°C Outline Drawings Package Figure M.