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MA01503D - Limiter/Low Noise Amplifier Die Preliminary Release 8.5 - 12.0 GHz

General Description

The MA01503D is a balanced, three-stage low noise amplifier and limiter die fabricated using ® M/A-COM’s mature GaAs Self-Aligned MSAG MESFET Process.

This product is fully matched to 50 ohms on both the input and the output.

Key Features

  • 8.5 to 12.0 GHz Operation 10W CW Power Handling Capability 50Ω Input Impedance Preliminary Release Balanced Three Stage LNA with Limiter.
  • Excellent Return Loss Self-Aligned MSAG® MESFET Process.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MA01503D Limiter/Low Noise Amplifier Die (8.5 - 12.0 GHz) FEATURES • • • 8.5 to 12.0 GHz Operation 10W CW Power Handling Capability 50Ω Input Impedance Preliminary Release Balanced Three Stage LNA with Limiter • • Excellent Return Loss Self-Aligned MSAG® MESFET Process DESCRIPTION The MA01503D is a balanced, three-stage low noise amplifier and limiter die fabricated using ® M/A-COM’s mature GaAs Self-Aligned MSAG MESFET Process. This product is fully matched to 50 ohms on both the input and the output. MAXIMUM RATINGS Rating (TA = 25 °C unless otherwise noted) Symbol Value DC Drain Supply Voltage DC Gate Supply Voltage RF Input Power Junction Temperature Storage Temperature VDD VGG PIN TJ TSTG 8 -6 15 150 -40 to +150 Unit Vdc Vdc W °C °C ELECTRICAL CHARACTERISTICS VDD=5.