Datasheet Details
| Part number | TTS3816B4E |
|---|---|
| Manufacturer | TwinMOS |
| File Size | 302.99 KB |
| Description | 2M x 16Bit x 4 Banks synchronous DRAM |
| Datasheet |
 TTS3816B4E Datasheet
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General Description
The TTS3816B4E is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 8 x 1,048,576 words by 16 bits, fabricated with M’tec high performance CMOS technology.
Key Features
- JEDEC standard 3.3V power supply.
- LVTTL compatible with multiplexed address.
- Four-banks operation.
- MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
- All inputs are sampled at the positive going edge of the system clock.
- Burst read single-bit write operation.
- DQM for masking.
- Auto & self refresh.
- 64ms refresh period (4K cycle.