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TTS3816B4E 2M x 16Bit x 4 Banks synchronous DRAM

TTS3816B4E Description

M.tec 2M x 16Bit x 4 Banks synchronous DRAM TTS3816B4E GENERAL .
The TTS3816B4E is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 8 x 1,048,576 words by 16 bits, fabricated with M’tec high perf.

TTS3816B4E Features

* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four-banks operation
* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
* All inputs are

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Datasheet Details

Part number
TTS3816B4E
Manufacturer
TwinMOS
File Size
302.99 KB
Datasheet
TTS3816B4E_TwinMOS.pdf
Description
2M x 16Bit x 4 Banks synchronous DRAM

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16Bit Banks synchronous DRAM TwinMOS
TwinMOS TTS3816B4E-like datasheet