TTS3816B4E dram equivalent, 2m x 16bit x 4 banks synchronous dram.
* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four-banks operation
* MRS cycle with address key programs -. CAS latency.
FEATURES
* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four-banks opera.
The TTS3816B4E is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 8 x 1,048,576 words by 16 bits, fabricated with M’tec high performance CMOS technology. Synchronous design allows precise cycle control with the use of system cloc.
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