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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
P-Channel 1.25-W, 1.8-V (G-S) MOSFET
TF2305B
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
- 16 0.060 at VGS = - 4.5 V 0.080 at VGS = - 2.5 V
ID (A) -3.0 -2.0
(SOT-23)
G1 S2
3D
Top View TF2305B
FEATURES Power MOSFETs: 1.8 V Rated
Pb-free Available
RoHS*
COMPLIANT
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
TA = 25 °C
ID
Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b
IDM IS
Maximum Power Dissipationa, b
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit - 16 ± 12
-3.5 ± 12 - 1.6 1.