SSS4N60 mosfet equivalent, n-channel mosfet.
RDS(ON) =2.5Ω@VGS=10V Ultra Low gate charge(tupical 15.0nC) Low reverse transfer capacitance(CRSS =typica8.0pF) Fast switching capability Avalanche energy specified Impro.
in power supplies .PWM motor controls, high efficient DC to DC converters and bridge circuits.
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The SSS4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high sp.
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