2016 transistor equivalent, n-channel enhancement mode field effect transistor.
VDS (V) = 20V ID = 4.2 A (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 4.5V) RDS(ON) < 63mΩ (VGS = 2.5V)
TO-236 (SOT-23) Top View
G D
S
D
G S
Absolute Maximum Ratings TA=25°C unl.
Features
VDS (V) = 20V ID = 4.2 A (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 4.5V) RDS(ON) < 63mΩ (VGS = 2.5V)
TO-236 (SOT-23.
The 2016 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.
Features
VDS (V) = 20V ID = 4.2 A (VGS =.
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