1481 mosfet equivalent, p-channel mosfet.
* VDS = -12V,ID = -5.5A RDS(ON) < 38mΩ @ VGS=-2.5V RDS(ON) < 26mΩ @ VGS=-4.5V
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S Schematic diagram
* Advanced trench MOSFET process technology
* Ultra lo.
General Features
* VDS = -12V,ID = -5.5A RDS(ON) < 38mΩ @ VGS=-2.5V RDS(ON) < 26mΩ @ VGS=-4.5V
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S Schematic dia.
The 1481 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications.
General Features
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