TSU2N60MZ mosfet equivalent, n-channel mosfet.
* 1.9A, 600V, RDS(on) = 5.00Ω @VGS = 10 V
* Low gate charge ( typical 9nC)
* High ruggedness
* Fast switching
* 100% avalanche tested
* ESD improv.
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in t.
Image gallery
TAGS
Download (Size : 227.53KB)