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TSP8N60M - 600V N-Channel MOSFET

Description

This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Features

  • 7.5A,600v,RDS(on)=1.2Ω@VGS=10V.
  • Gate charge (Typical 30nC).
  • High ruggedness.
  • Fast switching.
  • 100% AvalancheTested.
  • Improved dv/dt capability General.

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Datasheet Details

Part number TSP8N60M
Manufacturer Truesemi
File Size 801.77 KB
Description 600V N-Channel MOSFET
Datasheet download datasheet TSP8N60M Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TSP8N60M/TSF8N60M 600V N-Channel MOSFET Features ■ 7.5A,600v,RDS(on)=1.2Ω@VGS=10V ■ Gate charge (Typical 30nC) ■ High ruggedness ■ Fast switching ■ 100% AvalancheTested ■ Improved dv/dt capability General Description This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
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