TSP18N50M datasheet, mosfet equivalent, Truesemi

Avg. rating / M : 1.0 rating-1

datasheet Download (Size : 636.81KB)

Features and benefits

* 18.0A,500V,Max.RDS(on)=0.30 Ω @ VGS =10V
* Low gate charge(typical 50nC)
* High ruggedness
* Fast switching
* 100% avalanche tested
* Improved d.

Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in t.

Image gallery